Conference program

08:00 – 17:00

Conference Registration

13:45 – 17:00

Poster Exhibit

Conference Opening

09:00 – 09:10

Welcome

Stefan E. Schulz

Technische Universität Chemnitz, Center for Microtechnologies, Germany

Keynote Presentation

09:10 – 09:55

Keynote

“21st century's prophesies: How future trends are challenging the semiconductor business”

Jakob Kriz

Infineon Technologies Dresden

SESSION 1: Integration                     Chair: S. E. Schulz

09:55 – 10:15

“SIMULATION ASSISTED BEOL PROCESS OPTIMIZATION”

Marcus Wislicenus1*, Johannes Koch¹, Benjamin Uhlig¹, Axel Preusse²

1 Fraunhofer IPMS - Center Nanoelectronic Technologies, Königsbrücker Str. 178, 01099 Dresden, Germany

2 GLOBALFOUNDRIES Module One LLC Co. KG, Wilschdorfer Landstr. 101, 01109 Dresden, Germany

10:15 - 10:35

“MIMCAP DEVICE INTEGRATION WITH OPTIMIZED HIGH-K DIELECTRIC MATERIAL”

Prakash Periasamy, Archana Subramaniyan, Lili Cheng, Dina Triyoso, Ben Kim, Robert Fox

GLOBALFOUNDRIES INC., Malta, New York, USA

10:35 – 11:00

Coffee Break

Session 2: 3D Integration/Packaging     Chair: T. Ohba

11:00 – 11:35

Invited

"TRENDS IN PACKAGING – FROM FAN-OUT WAFER LEVEL PACKAGING TO PANEL LEVEL PACKAGING "

Michael Töpper

Fraunhofer IZM

11:35 – 11:55

“MORPHOLOGY OF IMC IN THE BINARY SYSTEMS OF CO/SN AND CU/SN”

Fuya Nagano^1,2, Jaber Derakhshandeh², Lin Hou², Myriam Van De Peer², Inge De Preter², Shamin Houshmand Sharifi^2,4 , Masanori Kajihara³, Kenneth June Rebibis², Andy Miller², Gerald Beyer² and Eric Beyne²

1) Graduate School, Tokyo Institute of Technology, Yokohama 226-8502, Japan

2) imec, Kapeldreef 75, 3001 Leuven, Belgium

3) Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

4) Technical University of Dresden (TU Dresden), Dresden, 01069, Germany

11:55 – 12:15

“COMPARING SAM (SELF-ASSEMBLED MONOLAYER) DEPOSITION METHODS TO PASSIVATE COPPER MICROBUMPS FOR 3D STACKING”

Shamin Houshmand Sharifi^1,2, Jaber Derakhshandeh², Silvia Armini², Inge De Preter² , Pieter Bex², Lin Hou², Johann W. Bartha¹, Volker Neumann¹, Sebastiaan Herregods², Fuya Nagano^2,3, Kenneth June Rebibis², Andy Miller², Ingrid De Wolf², Gerald Beyer² and Eric Beyne²

1Department of Electrical and Computer Engineering, Technical University of Dresden, 01069 Dresden, Germany

2 IMEC, Kapeldreef, 3001 Leuven, Belgium

3 Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

12:15 – 12:35

“3D SYSTEM INTEGRATION ON 300 MM WAFER LEVEL: HIGH-ASPECT-RATIO TSVS WITH RUTHENIUM SEED LAYER BY THERMAL ALD AND SUBSEQUENT COPPER ELECTROPLATING”

Sebastian Killge ^a*, Irene Bartusseck ^b, Marcel Junige ^a, Volker Neumann^a, Christian Wenzel ^a, Matthias Böttcher ^b, Matthias Albert ^a, M. Jürgen Wolf ^b, Johann W. Bartha ^a

aTechnische Universität Dresden, Institute of Semiconductors and Microsystems (IHM), 01062 Dresden, Germany

bFraunhofer IZM-ASSID, Ringstrasse 12, 01468 Moritzburg, Germany

12:35 – 13:45

Lunch

12:45 – 14:15

Committee Meeting

13:45 – 15:30

Poster Session

15:00 – 15:30

Coffee Break

Session 3: Silicides 1                                 Chair: C. Wiemer

15:30 – 15:50

“PHASE FORMATION BETWEEN NI THIN FILMS AND GAAS SUBSTRATE”

S. Rabhia^b, C. Perrin-Pellegrino^a*, S. Zhiou^a, , M.C. Benoudia^b , M. Texier^a, K. Hoummada^a

a Institut Matériaux Microélectronique Nanosciences de Provence (IM2NP), Aix-Marseille Université (AMU), France

b Laboratoire Mines Métallurgie Matériaux (L3M), Ecole Nationale Supérieure des Mines et de la Métallurgie (ENSMM), Annaba, Algérie.

15:50 – 16:10

“ON THE INHERITANCE OF CRYSTALLOGRAPHIC TEXTURE DURING THE NICKEL SILICIDE SOLID-PHASE REACTION.”

F.A. Geenen^a, E. Solano^a, C. Mocuta^b, J. Jordan-Sweet^c, C. Lavoie^c, C. Detavernier^a

a Ghent University, CoCooN, krijgslaan 281/S1, 9000 Ghent, Belgium

b Synchrotron SOLEIL, L’orme des Merisiers, Saint Aubin – BP 48, Gif-sur-Yvette, France

cIBM T.J. Watson Research Center, Yorktown Heights, NY, USA

16:10-16:30

“A MODIFIED SCHEME TO REDUCE THE SPECIFIC CONTACT RESISTIVITY OF NISI/SI CONTACTS BY MEANS OF DOPANT SEGREGATION TECHNIQUE”

Ningyuan Duan¹, Guilei Wang¹, Jun Luo^1,2*, Shujuan Mao, Henry Radamson¹, Wenwu Wang¹, Dapeng Chen¹, Junfeng Li¹, Chao Zhao^1,2, and Tianchun Ye^1,2

1)Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

2)University of Chinese Academy of Sciences (UCAS), Beijing 100049, P. R. China

19:00 – 22:00

Conference dinner

DINNER SPEECH:

“MICROTUBULAR NEMS FOR ON- AND OFF-CHIP APPLICATIONS”

o. g. schmidt

leibniz institute for solid state and materials research

08:00 – 16:40

Conference Registration

09:00 – 15:30

Poster Exhibit

SESSION 4: Metallization 1                     chair: S. E. Schulz

09:00 – 09:20

“THERMAL ALD OF METALLIC COPPER ON COBALT FOR ADVANCED INTERCONNECTS”

Colin Georgi¹, Marcel Melzer², Jörn Bankwitz², Charan K. Nichenametla², Heinrich Lang³, Stefan E. Schulz^1,2

1 Fraunhofer Institute for Electronic Nanosystems, Technologie-Campus 3, 09126 Chemnitz, Germany

2 Chemnitz University of Technology, Center for Microtechnologies, 09126 Chemnitz, Germany

3 Chemnitz University of Technology, Institute of Chemistry, 09126 Chemnitz, Germany

09:20 – 09:40

„INVESTIGATION OF ISOLATION LINER AND CU DIFFUSION BARRIER BY (PE)ALD, (PE)CVD AND FAST FOR TSV APPLICATION.”

Fabien Piallat¹*, Laetitia Bonnet¹, Julien Vitiello¹

1KOBUS, 611 rue Aristide Bergès, Z.A. de Pré Millet, 38330 Montbonnot-Saint-Martin, France

09:40 – 10:00

“MULTISCALE SIMULATION OF BARRIER/SEED PVD”

Erik E. Lorenz¹, Jörg Schuster¹, Stefan E. Schulz^1,2

1 Center for Microtechnologies, Chemnitz University of Technology, Germany

2 Fraunhofer Institute for Electronic Nano Systems, Germany

10:00 – 10:20

“PROCESS-ORIENTED MODELLING OF STRESSES AND MECHANICAL CONFINEMENT IN ADVANCED NANO-INTERCONNECTS; IMPLICATIONS FOR ELECTROMIGRATION”

Houman Zahedmanesh, Kristof Croes, Zsolt Tőkei

imec, Kapeldreef 75, Leuven, 3001, Belgium

10:20 – 10:45

Coffee Break

SESSION 5: Silicides 2                                   chair: O. Thomas

10:45 – 11:05

“PHOSPHORUS REDISTRIBUTION DURING SILICIDATION FOR IN-SITU AND EX-SITU DOPED SILICON”

M. Lemang^{1, 2, 3}, M. Descoins³, Ph. Rodriguez², F. Nemouchi², M. Grégoire¹ and D. Mangelinck³

1STMicroelectronics, 850, rue Jean Monnet, 38926, Crolles cedex, France

2 Univ. Grenoble Alpes, F-38000 Grenoble, France

CEA-, LETI, MINATEC Campus, F-38054 Grenoble, France. 3 CNRS, Aix Marseille Université, IM2NP (UMR 7334) Faculté de Saint-Jérôme, F-13397 Marseille Cedex, France

11:05 – 11:25

“COMBINED EFFECT OF PT AND W ALLOYING ELEMENTS ON THE NI-SILICIDE FORMATION”

T. Luo^a, D. Mangelinck^b, M. Descoins^a, M. Bertoglio^b, N. Mouaici ^c, A. Hallén^d, C. Girardeaux^a

a Aix-Marseille Univ, CNRS, IM2NP, Faculté Saint Jérôme, Case 142, 13397 Marseille Cedex 20, France

b CNRS, Aix-Marseille Univ, IM2NP, Faculté Saint Jérôme, Case 142, 13397 Marseille Cedex 20, France

c National School of Mines and Metallurgy ENSMM-Annaba, Ex CEFOS Chaiba BP 233 RP Annaba, W129, Sidi Amar, Algeria

d KTH Royal Institute of Technology, School of Information and Communication Technology (ICT), SE-164 40 Kista-Stockholm, Sweden

11:25 – 11:45

“DEGRADATION MECHANISM OF NI1-XPTX (0 < X < 0.15) GERMANOSILICIDES: EXPERIMENTS AND MODELLING”

Dominique Mangelinck^1,a, Emilie Bourgot^1,2,3, Patrice Gergaud², Fabrice Nemouchi², Magali Gregoire³ , Marion Descoins¹, Xipeng Tan¹

1 CNRS, Aix Marseille Université, IM2NP (UMR 7334) Faculté de Saint-Jérôme, F-13397 Marseille Cedex, France

2 Univ. Grenoble Alpes, F-38000 Grenoble, France CEA-, LETI, MINATEC Campus, F-38054 Grenoble, France. 3STMicroelectronics, 850, rue Jean Monnet, 38926, Crolles cedex, France

11:45 – 12:05

“PIONEERING CHARACTERIZATION OF NI-BASED SILICIDES ON SIGE USING 3D FLUORESCENCE TOMOGRAPHY”

P. Bleueta, E. Bourjota, Ph. Rodrigueza, P. Cloetensb, P. Gergauda, F. Nemouchia

a Univ. Grenoble Alpes, F-38000 Grenoble, France

CEA, LETI, MINATEC Campus, F-38054 Grenoble, France.

b European Synchrotron Radiation Facility, 38043, Grenoble Cedex 9, France

12:05 – 13:25

Lunch

SESSION 6: Flexible/Stretchable Devices          chair: S. Maitrejean

13:25 – 14:00

INVITED: „DIRECT CORRELATION BETWEEN MATERIAL STRUCTURE AND ELECTRONIC/MECHANICAL PROPERTIES OF POLYMER FILMS ON HARD AND STRETCHABLE SUBSTRATES”

Souren Grigorian

University of Siegen (Germany)

14:00 – 14:20

“ELABORATION AND CHARACTERIZATION OF A STRETCHABLE AND FLEXIBLE ULTRA-THIN SEMI-CONDUCTOR FILM”

P. Montméat a, c, S. Tardif b, c, T. Enot a, c, G. Enyedi a, c, F. Rieutord b, c and F. Fournel a, c

a- CEA, LETI, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble, France

b- CEA, INAC, MINATEC Campus, 17 rue des Martyrs, F-38054 Grenoble, France

c- Univ. Grenoble Alpes, F-38000 Grenoble, France

14:20 – 14:55

INVITED: “LIQUID METAL INTERCONNECTS AND THERMAL ELASTOMER PACKAGING FOR SOFT AND STRETCHABLE SYSTEMS”

Seung Hee Jeoung

Uppsala University, Sweden

14:55 – 15:20

Coffee Break

SESSION 7: Characterization                chair: M. Hecker

15:20 – 15:40

“COMPOSITION AND PHASE SEQUENCE OF NI-INGAAS INTERMETALLICS: AN IN SITU XRD AND ATOM PROBE TOMOGRAPHY STUDY”

S. Zhiou^a,b*, Ph. Rodriguez^a, F. Nemouchi^a, C. Perrin-Pellegrino^b, P. Gergaud^a and K. Hoummada^b

A Univ. Grenoble Alpes, F-38000, France ; CEA, LETI, MINATEC Campus, F-38054 Grenoble, France.

B IM2NP, CNRS/Aix-Marseille University, Faculté des Sciences de Saint-Jérôme case 142, 13397 Marseille, France

15:40 – 16:00

“KISSINGER KINECTS ANALYSIS OF NI/INGAAS/INP SOLID STATE REACTIONS THROUGH 3D RSM MEASUREMENTS”

J. Channagiri¹,S. Zhiou^1,2, P. Rodriguez¹, F. Nemouchi¹, N. Blanc^3,4, N. Boudet^3,4, P. Gergaud¹

 1Univ. Grenoble Alpes, F-38000 Grenoble, France; CEA, LETI, MINATEC Campus, F-38054 Grenoble, France

 2IM2NP, CNRS/Aix-Marseille University, Faculté des Sciences de Saint-Jérôme, case 142, 13397 Marseille, France.

3,4Univ. Grenoble Alpes, Inst. NEEL, F-38042 Grenoble; CNRS, Inst. NEEL, F-38042 Grenoble, France

16:00 – 16:20

“IN SITU COMBINED X-RAY DIFFRACTION AND OPTICAL CURVATURE MEASUREMENTS TO STUDY MICROSTRUCTURE AND STRESS INDUCED DURING THE CRYSTALLIZATION OF GETE THIN FILMS”

M. Gallard^1,2, M. S. Amara¹, F. Lauraux¹, C. Guichet¹, M.-I. Richard^1,5, S. Escoubas¹, C. Mocuta², P. Noé³, C. Sabbione³, F. Hippert⁴, M. Putero¹, N. Burle¹, O. Thomas¹

1 Aix-Marseille Université, CNRS, IM2NP UMR 7334, Campus de St-Jérôme, 13397 Marseille, France

2 Synchrotron SOLEIL, l’Orme des Merisiers, Saint-Aubin–BP 48, 91192 Gif-sur-Yvette, France

3 Université Grenoble Alpes, CEA-LETI, MINATEC, 17 rue des Martyrs, 38054 Grenoble, France

4 LNCMI, CNRS-UGA-UPS-INSA, 25 rue des Martyrs, 38042 Grenoble, France

5 ID01/ESRF, The European Synchrotron, 71 rue des Martyrs, 38043 Grenoble, France

17:30 – 21:00

networking event:

Visit of the The vw Transparent Factory “DIE GLÄSERNE MANUFAKTUR” and Dinner in the adjacent restaurant “Pattis”

Meeting point: 16:50 Hilton Hotel Lobby (20-minute walk to the factory)

08:00 – 14:00

Conference Registration

SESSION 8: Nanoscale Devices              chair: D. Erbetta

08:45 – 09:05

“IN-BASED CHALCOGENIDE NANOWIRES FOR ULTRA-SCALDED PHASE CHANGE MEMORY APPLICATIONS”

C. Wiemer¹, S. Selmo ^1,2, R. Cecchini¹, S. Cecchi¹, M. Fanciulli^1,2, E. Rotunno³, L. Lazzarini³, M. Rigato⁴, D. Pogany⁴, A. Lugstein⁴ and M. Longo¹

1Laboratorio MDM, IMM-CNR, Unita di Agrate Brianza, Via C. Olivetti 2, 20864 Agrate Brianza, MB, Italy

2Dipartimento di Scienza dei Materiali, University of Milano Bicocca, Via R. Cozzi 53, 20126 Milano, Italy

3IMEM-CNR, Parco Area delle Scienze 37/A, I-43124 Parma, Italy

4Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, A-1040 Vienna, Austria

09:05 – 09:25

“RESISTIVE SWITCHING DYNAMICS IN MEMRISTIVE BIFEO3 WITH METALLIC TOP AND BOTTOM ELECTRODES”

Nan Du¹, Niveditha Manjunath¹, Yuan Li¹, Tiangui You², Danilo Bürger¹, Ilona Skorupa^1,3, Damian Walczyk⁴, Christian Walczyk⁴, Thomas Schröder⁴, Stephan Menzel⁵, Eike Linn⁵, Rainer Waser⁵, Ramona Ecke⁶, Stefan E. Schulz⁶, Oliver G. Schmidt^1,7, Heidemarie Schmidt¹

1)Faculty of Electrical and Information Engineering, TU Chemnitz

2) State Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, Shanghai

3) Institute of Ion Beam Physics and Materials Research, HZDR

4) Leibniz-Institut für innovative Mikroelektronik, IHP

5) Peter Grünberg Institut, Forschungszentrum Jülich

6)Fraunhofer-Institut für Elektronische Nanosysteme, Chemnitz

7) Institute for Integrative Nanosciences, IFW Dresden

09:25 – 09:45

“SIMULATION OF RECONFIGURABLE FIELD-EFFECT TRANSISTORS: IMPACT OF THE NISI2-SI INTERFACES, CRYSTAL ORIENTATION, AND STRAIN”

Florian Fuchs^1,2,3,4, Jörg Schuster^2,4,5, Sibylle Gemming^1,2,3

1 Helmholtz-Zentrum Dresden-Rossendorf, 01314 Dresden

2 Center for Advancing Electronics Dresden, 01062 Dresden

3 Institute of Physics, TU Chemnitz, 09107 Chemnitz

4 Fraunhofer Institute for Electronic Nano Systems, 09126 Chemnitz

09:45 – 10:05

“MEMRISTIVE BFO WITH METALLIC ELECTRODES AS ARTIFICIAL SYNAPSE IN MACHINE LEARNING CIRCUITS”

Mahdi Kiani¹, Nan Du^1,4, Christian G. Mayr², Danilo Bürger^1,4, Ilona Skorupa^1,3, Ramona Ecke⁴, Stefan E. Schulz^4,5, Oliver G. Schmidt^1,6, Heidemarie Schmidt^1,4

1Materials Systems for Nanoelectronics, Chemnitz University of Technology, Chemnitz, Germany— 2Highly-parallel VLSI systems and Neuro-Microelectronics, Technische Universität Dresden, Dresden, Germany —3Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, Germany —4Fraunhofer Institute for Electronic Nano Systems, Chemnitz, Germany— 5Chemnitz University of Technology, Center for Microtechnologies, Chemnitz, Germany— 6Institute for Integrative Nanosciences, IFW Dresden, Dresden,Germany

10:05 – 10:25

“WAFER-LEVEL INTEGRATION OF CARBON NANOTUBES INTO MICRO-ELECTRO-MECHANICAL SYSTEMS“

Jens Bonitz¹, Sascha Hermann¹, Steffen Hartmann², Simon Böttger¹, Bernhard Wunderle², Stefan E.Schulz^1,3

1 Chemnitz University of Technology, Center for Microtechnologies

2 Chemnitz University of Technology, Materials and Reliability of Microsystems

3 Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz

10:25 - 10:50

COFFEE BREAK

SESSION 9: Dielectrics & Metallization 2        chair:   S. e. Schulz                                                 

10:50 – 11:25

INVITED: “PORE PROTECTION TECHNIQUES FROM ROOM- TO CRYO-TEMPERATURE PROCESSING”

Jean-Francois de Marneffe

imec

11:25 – 11:45

“FIRST-TIME IN SITU OBSERVATION OF POLYMERIZATION AND DAMAGE DURING ULK ETCHING”

Micha Haase¹, Marcel Melzer² and Stefan E. Schulz^{1, 2}

1Fraunhofer Institute for Electronic Nano Systems ENAS, Technologie-Campus 3, D-09126 Chemnitz, Germany

2Chemnitz University of Technology, Center for Microtechnologies, Reichenhainer Strasse 70, D-09107 Chemnitz, Germany

11:45 – 12:05

“IN-VACUO PHOTOEMISSION STUDIES OF THE CHEMICAL INTERACTIONS OF MANGANESE METAL WITH SELF-ASSEMBLED MONOLAYER (SAM) TERMINATED SIO2 AND SPIN-ON-GLASS (SOG) DIELECTRICS FOR BARRIER LAYER APPLICATIONS.”

A. Brady-Boyd,¹ S. Armini,² G. Hughes,¹ R. O’Connor¹ and J. Bogan¹

1School of Physical Sciences, Dublin City University, Dublin 9, Ireland.

2IMEC, B-3001 Heverlee, Leuven, Belgium.

12:05 – 12:40

INVITED: “TRENDS IN SCALING THE CU METALLIZATION”

Marleen H. van der Veen*, N. Jourdan, V. Vega Gonzalez, K. Vandersmissen, C. J. Wilson, O. Varela Pedreira, J. Bömmels, H. Struyf, Z. Tőkei

imec, Kapeldreef 75, 3001 Leuven, Belgium

12:40 – 13:00

“CHARACTERIZATIONS OF FLUORINE-FREE TUNGSTEN LINER AND ITS APPLICATION FOR PCRAM”

R. Famulok^a, Ph. Rodriguez^a, Y. Le Friec^b, J.-Ph. Reynard^b, K. Dabertrand^b, B.-N. Bozon^c, S. Faviera,^b, Y. Mazel^a, E. Nolot^a, B. Previtali^a, P. Gergaud^a, F. Nemouchi^a

a Univ. Grenoble Alpes, F-38000 Grenoble, France

CEA, LETI, MINATEC Campus, F-38054 Grenoble, France.

b STMicroelectronics, 850 rue Jean Monnet, BP 16, 38926 Crolles, France

c Applied Materials France, 864 chemin des Fontaines, 38190 Bernin, France

13:00 – 13:10

CLOSING REMARKS

13:10 - 14:45

LUNCH